Heterojunction subcells in inverted metamorphic multijunction solar cells

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United States of America Patent

PATENT NO 9231147
APP PUB NO 20140370648A1
SERIAL NO

14473703

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Abstract

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Inverted metamorphic multijunction solar cells having a heterojunction middle subcell and a graded interlayer, and methods of making same, are disclosed herein. The present disclosure provides a method of manufacturing a solar cell using an MOCVD process, wherein the graded interlayer is composed of (InxGa1-x)y Al1-yAs, and is formed in the MOCVD reactor so that it is compositionally graded to lattice match the middle second subcell on one side and the lower third subcell on the other side, with the values for x and y computed and the composition of the graded interlayer determined so that as the layer is grown in the MOCVD reactor, the band gap of the graded interlayer remains constant at 1.5 eV throughout the thickness of the graded interlayer.

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Patent Owner(s)

  • SOLAERO TECHNOLOGIES CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cornfeld, Arthur Sandia Park, US 81 2087
Stan, Mark A Albuquerque, US 57 1494

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