High capacity select switches for three-dimensional structures
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United States of America Patent
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Jan 13, 2015
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app pub date -
Jun 24, 2013
filing date -
Jun 24, 2013
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Abstract
A three-dimensional nonvolatile memory array includes a select layer that selectively connects vertical bit lines to horizontal bit lines. Individual select switches of the select layer include two separately controllable transistors that are connected in series between a horizontal bit line and a vertical bit line. Each transistor in a select switch is connected to a different control circuit by a different select line.
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