GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 25, 2014
app pub date -
Jun 20, 2013
filing date -
Jun 20, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully