METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION
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United States of America Patent
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app pub date -
Jun 25, 2014
filing date -
Dec 19, 2006
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Abandoned
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Abstract
The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
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