Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer
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United States of America Patent
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Jun 13, 2017
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Jun 24, 2014
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Jun 27, 2013
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Abstract
According to one embodiment, a nitride semiconductor element includes: a stacked body; and a functional layer. The stacked body includes a first GaN layer, a first layer, and a second GaN layer. The first GaN layer includes a first protrusion. The first layer is provided on the first GaN layer and contains at least one of Si and Mg. The second GaN layer is provided on the first layer and includes a second protrusion. Length of bottom of the second protrusion is shorter than length of bottom of the first protrusion. A functional layer is provided on the stacked body and includes a nitride semiconductor.
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