Silicon controlled rectifier with integral deep trench capacitor
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United States of America Patent
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Apr 14, 2015
Grant Date -
Jan 1, 2015
app pub date -
Jun 5, 2014
filing date -
Jul 1, 2013
priority date (Note) -
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Abstract
Device structures and design structures that include a silicon controlled rectifier, as well as fabrication methods for such device structures. A well is formed in the device layer of a silicon-on-insulator substrate. A silicon controlled rectifier is formed that includes an anode in the well. A deep trench capacitor is formed that includes a plate coupled with the well. The plate of the deep trench capacitor extends from the device layer through a buried insulator layer of the silicon-on-insulator substrate and into a handle wafer of the silicon-on-insulator substrate.
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