Dice before grind with backside metal
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United States of America Patent
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Oct 20, 2015
Grant Date -
Jan 1, 2015
app pub date -
Jun 27, 2013
filing date -
Jun 27, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A method including forming a plurality of dicing channels in a front side of a wafer; the plurality of dicing channels including a depth at least greater than a desired final thickness of the wafer, filling the plurality of dicing channels with a fill material and removing a portion of the wafer from a back side of the wafer until the desired final thickness is achieved, where a portion of the fill material within the plurality of dicing channel is exposed. The method further including depositing a metal layer on the back side of the wafer; removing the fill material from within the plurality of dicing channels to expose the metal layer at a bottom of the plurality of dicing channels, and removing a portion of the metal layer located at the bottom of the plurality of dicing channels.
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