Semiconductor device and method of individual die bonding followed by simultaneous multiple die thermal compression bonding
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United States of America Patent
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Dec 20, 2016
Grant Date -
Jan 1, 2015
app pub date -
Jun 27, 2013
filing date -
Jun 27, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a carrier with an interface layer applied over the carrier. The interface layer can include non-conductive paste or non-conductive film. A plurality of semiconductor die is mounted to the carrier and interface layer by pressing the semiconductor die to the carrier and interface layer for one second or less, and simultaneously thermal compression bonding multiple semiconductor die to the carrier and interface layer for 5-10 seconds. By pressing the semiconductor die to the interface layer for a short period of time and then simultaneously thermal compression bonding multiple semiconductor die to the interface layer for a second longer period of time, the overall throughput of die bonding increases to process more die per unit of time. An encapsulant is deposited over the semiconductor die. The carrier is removed and interconnect structure is formed over the semiconductor die and encapsulant.
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