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Abstract

A method of forming nickel self-aligned silicide (Ni-salicide) is disclosed, the method including the following steps in the sequence set forth: providing a substrate; forming a gate on the substrate and forming a SiGe source and a SiGe drain beneath a surface of the substrate; growing a silicon epitaxial layer over the SiGe source and the SiGe drain; amorphizing the silicon epitaxial layer; depositing a Ni—Pt layer over the amorphized silicon epitaxial layer; performing a first rapid thermal anneal process to cause Ni—Pt alloy and the amorphized silicon epitaxial layer to react; removing the unreacted Ni—Pt alloy by wet etching; and performing a second rapid thermal anneal process to form a Ni-salicide.

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First Claim