SEMICONDUCTOR NANOCRYSTALS, METHODS FOR PREPARING SEMICONDUCTOR NANOCRYSTALS, AND PRODUCTS INCLUDING SAME

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United States of America Patent

SERIAL NO

14296185

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Abstract

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Disclosed is a method for preparing a semiconductor nanocrystal, comprising: forming a reaction mixture comprising injecting one or more first semiconductor nanocrystal precursors including one or more Group V elements and one or more Group VI elements into a mixture including one or more second semiconductor nanocrystal precursors including one or more Group II elements and one or more Group III elements at a first temperature; and reacting the first and second semiconductor nanocrystal precursors in the reaction mixture at a second temperature for a period time sufficient to form a semiconductor nanocrystal core comprising at least a portion of the one or more Group II elements, one or more Group III elements, one or more Group V elements, and one or more Group VI elements included in the first and second semiconductor nanocrystal precursors, wherein the second temperature is greater than the first temperature.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG RESEARCH AMERICA INC665 CLYDE AVENUE MOUNTAIN VIEW CA 94043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HUANG, DIYUN FREMONT, US 28 171
STECKEL, JONATHAN S CARLISLE, US 53 1856

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