Superlattice phase change memory device

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United States of America Patent

PATENT NO 9142771
APP PUB NO 20150008385A1
SERIAL NO

14017050

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Abstract

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According to one embodiment, a memory device includes a stacked film stacked in a superlattice structure. The stacked film includes a first layer, a second layer, and a third layer different in composition. The first layer is provided between the second layer and the third layer. The second layer includes a first atom reversibly moved by application of energy. The third layer includes a second atom reversibly moved by application of energy. The second atom is different from the first atom.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hidaka, Aoi Mie-ken, JP 2 8
Nakai, Tsukasa Mie-ken, JP 59 570

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