Variable resistance memory

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United States of America Patent

PATENT NO 8969846
APP PUB NO 20150008388A1
SERIAL NO

14330951

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A variable resistance memory according to the present embodiment includes a memory cell including an ion source electrode including metal atoms, an opposite electrode, an amorphous silicon film formed between the ion source electrode and the opposite electrode, and a polysilicon film formed between the amorphous silicon film and the ion source electrode.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawasaki, Hirohisa Yokohama, JP 17 602

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