METHOD AND LAYOUT FOR DETECTING DIE CRACKS

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United States of America Patent

APP PUB NO 20150008431A1
SERIAL NO

13935496

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Abstract

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A method of detecting a crack in a semiconductor die is provided. The method includes the following steps. A semiconductor die having an outer edge is provided, wherein a conductive feature is formed on semiconductor die along the outer edge. The conductive feature is biased, and a leakage current of the semiconductor die is measured, such that the crack propagating in the semiconductor the is detected. A semiconductor the with a layout for detecting a die crack and the method of manufacturing it are also provided. The semiconductor the includes a semiconductor the having an cuter edge, and a conductive feature on the semiconductor die along the outer edge. The conductive feature is configured to be biased by an external pin.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
VECHES, Anthony David Boise, US 2 3

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