Non-volatile semiconductor memory with nitride sidewall contacting nitride layer of ONO gate stack and methods for producing the same
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United States of America Patent
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Oct 4, 2016
Grant Date -
Jan 8, 2015
app pub date -
Feb 22, 2013
filing date -
Feb 28, 2012
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Abstract
A non-volatile semiconductor memory free from adverse effects due to process charge is provided. The non-volatile semiconductor memory includes: a silicon substrate; a first silicon oxide film; a second silicon oxide film; a first silicon nitride film; and a second silicon nitride film, wherein the first silicon oxide film is layered on the silicon substrate, the first silicon nitride film is layered on the first silicon oxide film, the second silicon oxide film is layered on the first silicon nitride film, and the second silicon nitride film is layered to have a first part that is in contact with the first silicon nitride film and a second part that is in contact with the silicon substrate.
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