Self-aligned bipolar junction transistors

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United States of America Patent

PATENT NO 9349845
APP PUB NO 20150008558A1
SERIAL NO

14495057

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Abstract

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Device structures and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harame, David L Essex Junction, US 86 853
Liu, Qizhi Lexington, US 213 1353

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