Sensing operations in a memory device
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United States of America Patent
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Oct 20, 2015
Grant Date -
Jan 8, 2015
app pub date -
Jul 5, 2013
filing date -
Jul 5, 2013
priority date (Note) -
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Abstract
Methods and apparatus for sensing operations in memory devices are disclosed. In at least one embodiment, a sensing operation to determine negative threshold voltages in memory cells by an elevated source potential applied to a string of memory cells and an elevated data line potential applied to the string of memory cells is disclosed. A ramped sense potential is incorporated into the sense operation according to at least one embodiment. A sense circuit diode allows a sense potential to fall below a data line potential during a sensing operation according to another embodiment.
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