VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

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United States of America Patent

APP PUB NO 20150013594A1
SERIAL NO

14322270

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Abstract

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A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a first gas supply path configured to supply a first process gas including organic metal and a carrier gas into the reaction chamber; a second gas supply path configured to supply a second process gas including ammonia into the reaction chamber; a first carrier gas supply path configured to supply a first carrier gas of a hydrogen or inert gas into the first gas supply path while being connected to the first gas supply path and including a first mass flow controller; and a second carrier gas supply path configured to supply a second carrier gas of a hydrogen or inert gas different from the first carrier gas into the first gas supply path while being connected to the first gas supply path and including a second mass flow controller.

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Patent Owner(s)

Patent OwnerAddress
NUFLARE TECHNOLOGY INC8-1 SHINSUGITA-CHO ISOGO-KU YOKOHAMA-SHI KANAGAWA 235-8522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SATO, Yuusuke Tokyo, JP 116 1528
YAMADA, Takumi Kanagawa, JP 61 122

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