THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES
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United States of America Patent
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Issued Date -
Jan 15, 2015
app pub date -
Jul 12, 2013
filing date -
Jul 12, 2013
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Abstract
A thin body field effect transistor (FET) nanopore sensor includes a silicon on insulator (SOI) structure having an annular shape and comprising a source, a drain and a thin body channel interposed therebetween. A nanopore is formed in a central opening of the SOI structure. A gate dielectric is disposed on the SOI structure insulating the SOI structure from a liquid gate within the nanopore. A back gate is formed around the SOI structure. A shallow trench isolation (STI) layer is formed between the SOI structure and the back gate.
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