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Abstract

A method of forming a salicide block with reduced defects is disclosed, the method including performing an ultraviolet cure process on a silicon nitride layer deposited in a previous step. High-energy ultraviolet light used in the ultraviolet cure process breaks the hydrogen-containing chemical bonds such as silicon-hydrogen and nitrogen-hydrogen in the silicon nitride layer, and the dissociated hydrogen forms molecular hydrogen which is thereafter evacuated away by a vacuuming apparatus. In this way, the hydrogen content in the silicon nitride layer can be effectively decreased and the reaction between hydrogen in the silicon nitride layer and photoresist subsequently coated thereon can hence be reduced. As a result, a salicide block with reduced defects can be obtained, thus improving process reliability and product yield.

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First Claim