METHOD FOR MAKING SILICON-GERMANIUM ABSORBERS FOR THERMAL SENSORS

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United States of America Patent

APP PUB NO 20150017788A1
SERIAL NO

14327715

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A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10−3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.

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Patent OwnerAddress
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INCPO BOX 868 NASHUA NH 03061-0868

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Inventor Name Address # of filed Patents Total Citations
Vu, Vu A Falls Church, US 12 68

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