METHOD FOR MAKING SILICON-GERMANIUM ABSORBERS FOR THERMAL SENSORS
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United States of America Patent
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Issued Date -
Jan 15, 2015
app pub date -
Jul 10, 2014
filing date -
Jul 11, 2013
priority date (Note) -
Abandoned
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Abstract
A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10−3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.
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