PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER

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United States of America Patent

SERIAL NO

14505289

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Abstract

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A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

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Patent Owner(s)

Patent OwnerAddress
KLA-TENCOR CORPORATIONONE TECHNOLOGY DRIVE MILPITAS CA 95035

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jensen, Earl Santa Clara, US 19 84
Sun, Mei Los Altos, US 26 210

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