Semiconductor light emitting device, semiconductor wafer with first and second portions with different lattice polarities

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United States of America Patent

PATENT NO 9312429
APP PUB NO 20150021546A1
SERIAL NO

14335113

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Abstract

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According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Rei Edogawa-ku, JP 52 431
Hwang, Jongil Nonoichi, JP 36 424
Nunoue, Shinya Ichikawa, JP 312 3298
Saito, Shinji Yokohama, JP 328 5356

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