Method of etching a silicon substrate

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United States of America Patent

PATENT NO 9548207
APP PUB NO 20150024604A1
SERIAL NO

14322235

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Abstract

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A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in plasma, the method including introducing a rare gas into a reaction system to ionize the rare gas.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Masataka Hiratsuka, JP 170 1886
Ogata, Yoshinao Kawasaki, JP 6 5
Uyama, Masaya Kawasaki, JP 37 121

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