Substrate processing method

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United States of America Patent

PATENT NO 9371225
APP PUB NO 20150024605A1
SERIAL NO

14330662

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Abstract

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A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Minami, Seiko Warabi, JP 15 19
Sakai, Toshiyasu Kawasaki, JP 64 1420

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