METHOD FOR PRODUCING Cu2ZnSnS4-xSex (0 LESS THAN-EQUAL TO X LESS THAN-EQUAL TO 4) THIN FILM BY ONE STEP ELECTRODEPOSITION IN ELECTROLYTIC BATH CONTAINING IONIC LIQUID
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United States of America Patent
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Issued Date -
Jan 29, 2015
app pub date -
Aug 26, 2013
filing date -
Jul 25, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A Cu2ZnSnS4-xSex (0≦x≦4) thin film solar cell is disclosed. The thin film solar cell includes a Cu2ZnSnS4-xSex (0≦x≦4) thin film as an absorber layer produced by forming a precursor film composed of Cu, Zn, Sn, and Se using an ionic liquid as a solvent through a constant current process and annealing the precursor film with sulfur. Also disclosed is a method for fabricating the thin film solar cell. The method uses a non-vacuum electrodeposition process that is appropriate for large-area mass production and is thus cost effective compared to a vacuum process. In addition, since the method uses an ionic liquid, the formation of by-products harmful to humans as a result of side reactions is suppressed. Furthermore, the method uses a one-step electrodeposition process, which enables the deposition of a maximum of four elements at one time, or a multi-step deposition process, and an annealing process.
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