RESIST MATERIAL AND PATTERN FORMING METHOD USING SAME
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United States of America Patent
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app pub date -
Dec 13, 2013
filing date -
Jul 26, 2013
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Abandoned
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Abstract
In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.
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