Nonvolatile semiconductor memory device and method of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9196627
APP PUB NO 20150035036A1
SERIAL NO

14197427

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to an aspect of the invention, a first insulating layer is buried in a first trench provided in at least one of an interstice between first and second semiconductor pillars, a side surface portion of the first semiconductor pillar opposed to the second semiconductor pillar, and a side surface portion of the second semiconductor pillar opposed to the first semiconductor pillar. A first trench penetrates each stack from an uppermost portion of the stack to a first conductive layer in a lowermost portion of the stack. The first trench is arranged away from a first connection portion. Each of the first conductive layers in contact with the first insulating layer includes a silicide layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuzumi, Yoshiaki Mie-ken, JP 333 10802
Katsumata, Ryota Mie-ken, JP 204 10789
Konno, Atsushi Mie-ken, JP 16 108

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