Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods
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United States of America Patent
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Aug 4, 2015
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Aug 5, 2013
filing date -
Aug 5, 2013
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Abstract
Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.
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