Removing metal fills in a wiring layer
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United States of America Patent
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Jul 21, 2015
Grant Date -
Feb 5, 2015
app pub date -
Jul 11, 2014
filing date -
Jul 31, 2013
priority date (Note) -
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Abstract
The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. With the technical solution according to embodiments of the invention, undesirable influences due to metal FILLs will be eliminated.
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