Semiconductor storage device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9240226
APP PUB NO 20150036410A1
SERIAL NO

14202630

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Abstract

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A memory includes a first and second cell storing first data and second or reference-data. A first and second bit-lines connected to the first and second cells respectively correspond to a first and second sense-nodes. A first transfer-gate is inserted/connected between the first bit-line and the first sense-node. A second transfer-gate is inserted/connected between the second bit-line and the second sense-node. A sense-amplifier is inserted or connected between the first and second sense-nodes. A preamplifier includes a first and second common-transistors. The first common-transistor applies a first power-supply voltage to either the first or the second sense-node according to the first and second data or according to the first and reference-data during a data-read-operation. The second common-transistor applies a second power-supply voltage to the other sense-node out of the first and second sense-nodes according to the first and second data or according to the first and reference data.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ogiwara, Ryu Yokohama, JP 83 674
Takashima, Daisaburo Yokohama, JP 245 3262

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