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Abstract

A method for producing a layered stack for manufacturing a thin film solar cell having a compound semiconductor of the type Cu₂ZnSn(S,Se)₄ is described. The method has the steps of: providing a substrate; depositing a barrier layer consisting of a material adapted to inhibit the diffusion of alkali metals on said substrate; depositing an electrode layer on said barrier layer; depositing a first precursor layer comprising the metals copper, zinc and tin; depositing a second precursor layer comprising at least one chalcogene selected from sulphur and selenium on said first precursor layer; annealing said precursor layers to crystallize said compound semiconductor; supplying at least one process gas during annealing of said first and second precursor layers; and depositing elemental sodium and/or a sodium containing compound on the precursor layers and/or the electrode layer in advance of the annealing of the precursor layers, on the precursor layers during said annealing of the precursor layers, and/or on said compound semiconductor.

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First Claim