Method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 9397140
APP PUB NO 20150037931A1
SERIAL NO

14180647

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Abstract

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A method of manufacturing a semiconductor device includes forming a stack of films including a conductive film layer above a semiconductor substrate; patterning the stack of films by dry etching; and cleaning including generation of plasma in an ambient including BCl3 and controlling a bias power to a nonbiased state.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuniya, Takuji Yokkaichi, JP 17 234

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