HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN

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United States of America Patent

SERIAL NO

14525140

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Abstract

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One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.

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Patent Owner(s)

Patent OwnerAddress
SOLARCITY CORPORATION3055 CLEARVIEW WAY SAN MATEO CA 94402

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Jianming Palo Alto, US 134 3800
Heng, Jiunn Benjamin Redwood City, US 52 618
Liang, Jianjun Fremont, US 7 77
Xu, Zheng Pleasanton, US 263 3988
Yu, Chentao Sunnyvale, US 35 490

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