ACIDIC ETCHING PROCESS FOR SI WAFERS
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United States of America Patent
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Issued Date -
Feb 12, 2015
app pub date -
Aug 7, 2013
filing date -
Aug 7, 2013
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Abstract
The present invention relates to a method for acidic surface etching of a silicon wafer, such as those used for solar cells, comprising contacting at least one surface of a silicon wafer as cut with an acidic etching agent, provided that the wafer is, prior to the acidic etching, not subjected to an alkaline etching step or process. Further, the present invention is directed to Si wafer, photovoltaic cells, PERC photovoltaic cells and solar modules produced according to the method of the present invention.
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