Nonvolatile semiconductor memory device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9123747
APP PUB NO 20150041815A1
SERIAL NO

14195022

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a plurality of memory cell transistors including a floating gate and a control gate and a plurality of peripheral circuit transistors including a lower electrode portion and an upper electrode portion are included. The floating gate includes a first polysilicon region, and the lower electrode includes a second polysilicon region. The first polysilicon region is a p-type semiconductor in which boron is doped, and the second polysilicon region is an n-type semiconductor in which phosphorus and boron are doped.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aiso, Fumiki Mie, JP 59 590
Fujita, Junya Mei, JP 71 430
Hashiura, Saku Mie, JP 5 11
Murata, Takeshi Mie, JP 74 442
Sonehara, Takeshi Mie, JP 48 410

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