SEMICONDUCTOR DEVICE INCLUDING STI STRUCTURE AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Feb 12, 2015
app pub date -
Jul 29, 2014
filing date -
Aug 5, 2013
priority date (Note) -
Abandoned
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Abstract
Semiconductor devices and fabrication methods are disclosed. A mask layer having an opening is formed on a semiconductor substrate. The semiconductor substrate is etched along the opening of the mask layer to form a trench therein. The mask layer is laterally etched from the opening of the mask layer along a top surface of the semiconductor substrate to expose a surface portion of the semiconductor substrate on each side of the opening. A liner oxide layer is formed by a thermal oxidation process on interior surface of the trench and on the exposed surface portion of the semiconductor substrate. The thermal oxidation process is controlled such that an upper corner between the top surface of the semiconductor substrate and the trench is rounded after the liner oxide layer is formed. An insulation layer is formed on the liner oxide layer and fills the trench.
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