Method for making three dimensional memory array architecture using phase change and ovonic switching materials

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United States of America Patent

PATENT NO 9252362
SERIAL NO

14470247

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Abstract

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Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines, such that the at least one conductive extension intersects a portion of at least one of the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT633 WEST FIFTH STREET 24TH FLOOR LOS ANGELES CA 90071

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pio, Federico Brugherio, IT 85 941

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