Resistive memory cell

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United States of America Patent

PATENT NO 9159921
SERIAL NO

14473400

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Abstract

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Semiconductor memory devices, resistive memory devices, memory cell structures, and methods of forming a resistive memory cell are provided. One example method of a resistive memory cell can include a number of dielectric regions formed between two electrodes, and a barrier dielectric region formed between each of the dielectric regions. The barrier dielectric region serves to reduce an oxygen diffusion rate associated with the dielectric regions.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ramaswamy, D V Nirmal Boise, US 91 656
Rocklein, Matthew N Boise, US 40 205

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