Sidewall image transfer with a spin-on hardmask

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United States of America Patent

PATENT NO 9099401
APP PUB NO 20150048430A1
SERIAL NO

14028827

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Abstract

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Semiconductor devices include a first and a second set of parallel fins, each set of fins having a same number of fins and a pitch between adjacent fins below a minimum pitch of an associated lithography process, where a spacing between the first and second set of fins is greater than the pitch between adjacent fins; a gate structure over the first and second sets of fins; a merged source region that connects the first and second sets of fins on a first side of the gate structure; and a merged drain region that connects the first and second sets of fins on a second side of the gate structure.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
He, Hong Schenectady, US 1191 7763
Tseng, Chiahsun Wynantskill, US 64 384
Yeh, Chun-Chen Clifton Park, US 417 3476
Yin, Yunpeng Niskayuna, US 96 1365

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