Self-aligned gate contact structure
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United States of America Patent
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Apr 26, 2016
Grant Date -
Feb 19, 2015
app pub date -
Aug 19, 2013
filing date -
Aug 19, 2013
priority date (Note) -
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Abstract
Embodiments of present invention provide a method of forming a semiconductor device. The method includes depositing a layer of metal over one or more channel regions of respective one or more transistors in a substrate, the layer of metal having a first region and a second region; lowering height of the first region of the layer of metal; forming an insulating layer over the first region of lowered height, the insulating layer being formed to have a top surface coplanar with the second region of the layer of metal; and forming at least one contact to a source/drain region of the one or more transistors. Structure of the semiconductor device formed thereby is also provided.
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