Semiconductor devices and methods of manufacture
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United States of America Patent
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Feb 24, 2015
Grant Date -
Feb 19, 2015
app pub date -
Sep 11, 2013
filing date -
Aug 16, 2013
priority date (Note) -
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Abstract
Semiconductor devices with reduced substrate defects and methods of manufacture are disclosed. The method includes forming a dielectric material on a substrate. The method further includes forming a shallow trench structure and deep trench structure within the dielectric material. The method further includes forming a material within the shallow trench structure and deep trench structure. The method further includes forming active areas of the material separated by shallow trench isolation structures. The shallow trench isolation structures are formed by: removing the material from within the deep trench structure and portions of the shallow trench structure to form trenches; and depositing an insulator material within the trenches.
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