Program verify operation in a memory device
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United States of America Patent
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Jan 26, 2016
Grant Date -
Feb 19, 2015
app pub date -
Oct 30, 2014
filing date -
Nov 19, 2010
priority date (Note) -
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Abstract
Methods for program verifying a memory cell include generating an access line voltage in response to a count and applying the access line voltage to a control gate of the memory cell, and generating a pass signal in response to the access line voltage activating the memory cell. Methods further include comparing at least a portion of the count to an indication of a desired threshold voltage of the memory cell, and when the at least a portion of the count matches the indication of the desired threshold voltage of the memory cell, determining if the pass signal is present. Methods further include generating a signal indicative of a desire to inhibit further programming of the memory cell if the pass signal is present when the match is indicated.
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