GAS BARRIER FILM AND MANUFACTURING METHOD OF GAS BARRIER FILM
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United States of America Patent
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Sep 26, 2014
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Mar 29, 2012
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Abstract
A gas barrier film including a substrate of which the surface is formed of an organic material; an inorganic film which is formed on the substrate and contains silicon nitride; and a mixed layer which is formed in an interface between the substrate and the inorganic film, and contains components derived from the organic material and the inorganic film, wherein a compositional ratio N/Si between nitrogen and silicon contained in the inorganic film is 1.00 to 1.35, the inorganic film has a film density of 2.1 g/cm3 to 2.4 g/cm3 and a film thickness of 10 nm to 60 nm, and the mixed layer has a thickness of 5 nm to 40 nm.
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