ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
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United States of America Patent
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Feb 19, 2015
app pub date -
Mar 21, 2013
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Mar 23, 2012
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Abstract
A method of etching silicon of a material comprising silicon, the method comprising the steps of partially covering a silicon surface of the material comprising silicon with an elemental metal and then carrying out a metal-assisted chemical etching of the silicon by exposing the partially covered silicon surface to an etching composition, wherein at least some of the elemental metal for the metal-assisted chemical etching is formed by either: (a) exposing the silicon surface to a composition comprising metal ions, wherein the elemental metal forms by reduction of the metal ions and wherein the composition comprising metal ions is substantially free of HF, or (b) depositing the elemental metal directly onto the silicon surface.
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