METHOD OF PREVENTING VOLTAGE BREAKDOWN AT A SURFACE OF A SEMICONDUCTOR SUBSTRATE OF A SUPERJUNCTION SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Feb 19, 2015
app pub date -
Oct 30, 2014
filing date -
Jan 11, 2008
priority date (Note) -
Abandoned
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Abstract
A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided.
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