BOTTOM-UP FILL IN DAMASCENE FEATURES

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United States of America Patent

APP PUB NO 20150053565A1
SERIAL NO

14010404

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Abstract

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The embodiments herein relate to methods and apparatus for filling features with copper by a bottom-up fill mechanism without the use of organic plating additives. In some cases, filling occurs directly on a semi-noble metal layer, without the deposition of a copper seed layer. In other cases, the filling occurs on a copper seed layer. Factors such as the polarization of electrolyte, the use of a complexing agent, electrolyte pH, electrolyte temperature, and the waveform used to deposit material may contribute to promoting the bottom-up fill.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Reid, Jonathan D Sherwood, US 69 2614
Zhu, Huanfeng West Linn, US 8 67

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