NONLINEAR MEMRISTORS
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United States of America Patent
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Issued Date -
Feb 26, 2015
app pub date -
Apr 25, 2012
filing date -
Apr 25, 2012
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Abstract
A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
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