Semiconductor devices having tensile and/or compressive stress and methods of manufacturing

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9431535
APP PUB NO 20150054028A1
SERIAL NO

14515981

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. The structure includes a gate stack comprising an oxide layer, a polysilicon layer and sidewalls with adjacent spacers. The structure further includes an epitaxially grown straining material directly on the polysilicon layer and between portions of the sidewalls. The epitaxially grown straining material, in a relaxed state, strains the polysilicon layer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dyer, Thomas W Pleasant Valley, US 106 2346
Yang, Haining S San Diego, US 176 3899

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Feb 29, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 29, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00