Methods of forming gate structures for FinFET devices and the resulting semiconductor products
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 22, 2015
Grant Date -
Feb 26, 2015
app pub date -
Aug 21, 2013
filing date -
Aug 21, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
One method disclosed herein includes forming a stack of material layers to form gate structures, performing a first etching process to define an opening through the stack of materials that defines an end surface of the gate structures, forming a gate separation structure in the opening and performing a second etching process to define side surfaces of the gate structures. A device disclosed herein includes first and second active regions that include at least one fin, first and second gate structures, wherein each of the gate structures have end surfaces, and a gate separation structure positioned between the gate structures, wherein opposing surfaces of the gate separation structure abut the end surfaces of the gate structures, and wherein an upper surface of the gate separation structure is positioned above an upper surface of the at least one fin.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully